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| NTE2534 (NPN) & NTE2535 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage Applications: D Relay Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-Emitter Saturation Voltage NTE2534 NTE2535 Symbol ICBO IEBO hFE1 hFE2 fT VCE(sat) Test Conditions VCB = 80V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 6A VCE = 5V, IC = 1A IC = 6A, IB = 600mA Min - - 100 30 - - - Typ - - - - 20 - - Max Unit 0.1 0.1 280 - - 0.5 0.4 MHz V V mA mA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Turn-On Time Storage Time NTE2534 NTE2535 Fall Time NTE2534 NTE2535 tf Symbol Test Conditions Min 90 80 6 - - - - - Typ - - - 0.2 0.7 1.7 0.1 0.2 Max Unit - - - - - - - - V V V s s s s s V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 1mA, IC = 0 ton tstg VCC = 50V, 10IB1 = -10IB2 = IC = 5A, Pulse Width = 20s, Duty Cycle 1%, Note 1 Note 1. For NTE2535, the polarity is reversed. .190 (4.82) .615 (15.62) .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C/ Case E .215 (5.47) |
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